High-Performance NED

NED Product Part

Micross’ High-Performance NED features a 4X increase in radiation dose rate sensitivity and 25% faster response times at 5X lower overdrive levels relative to legacy devices, with integrated differential drivers providing SWaP reduction, improved noise immunity and reduced delay times. The High-Performance NED can be screened to XT (Extended Temperature, -55°C to 125°C) and MIL-PRF-38534 Class K and provides a greatly improved functional replacement for the nearly 40-year-old legacy NED solution.

Documentation 

Products

Part Number Sensitivity Detector Delay Time Screening Level(s) Hermeticity Temperature RFQ RFI Tech Support
MYXRHNEDHCJ/K 5x104 15ns @2x Overdrive Class K Hermetic -55 to +125° C RFQ RFI Tech Support
MYXRHNEDHCJ/XT 5x104 15ns @2x Overdrive XT (Extended Temperature) Hermetic -55 to +125° C RFQ RFI Tech Support
MYXRHNEDHCJ/EM 5x104 15ns @2x Overdrive XT (Extended Temperature, Unqualified) Non-Hermetic (Epoxy Seal) -55 to +125° C RFQ RFI Tech Support

 

Overview

Micross High-Performance Nuclear Event Detector (NED, Figure 1) can detect gamma radiation pulses from a nuclear event. Within 15 ns following the leading edge of an incoming gamma radiation pulse, the High-Performance NED will assert its differential pulse and level output signals. The High-Performance NED’s level output may then be reset by the assertion of a differential input signal. The MYXRHNED features a minimum dose rate threshold of 5 x 104 rads(Si)/sec, thereby providing higher sensitivity than currently available NEDs. The dose rate threshold can be increased upwards up to 2 x 107 rads(Si)/sec, by means of an external adjustment resistor. The High-Performance NED, which is available in a 44 pin J-Lead ceramic package, is radiation hardened, enabling it to operate reliably in environments with high gamma dose and gamma dose rate, neutrons and heavy ions; and provide immunity to latch up.  It achieves this by using a custom designed PIN diode that’s optimized for gamma radiation, along with a rad-hard-by-design ASIC designed specifically for this purpose.  Since the ASIC contains the line drivers and receivers on-board as Rad Hard blocks, no additional consideration is needed for those functions.

Benefits

  • 4X Lower Minimum Dose Rate Sensitivity
  • 25% Faster Response Time at 5X Lower Overdrive – Enabling a More Rapid Shutdown of Critical Electronics
  • Improved Noise Immunity
  • Use Output Signal to Shut Down Power Supplies, Take Processors Offline and Block Memory Write Operations
  • Manufactured on US Soil
  • Improvements in Obsolescence Mitigation with In-House PIN Diode and Controller

Features

  • Gamma Dose Rate Sensitivity Threshold Range Adjustable from 5 x 104 to 2 x 107 rads (Si) / sec.
  • 44-Pin Hermetic Ceramic J-Lead SMT Package (.650in x .650in x .113in)
  • Integrated Differential Line Drivers and Receivers Eliminates the Need for Shielding External Drivers and Receivers
  • Total Dose (Device Survivability): 1 x 106 rads (Si)
  • Dose Rate (Operate Through): 1 x 1012 rads (Si) / sec.
  • Neutron Fluence (Operate Through): 5 x 1013 neutrons / cm2
  • Delay from Radiation Detected to Output Signal Asserted: 15ns at 2X Overdrive
  • 3.3V Power Requirement
  • -55°C to +125°C Temperature Range
  • Differential Line Drivers and Receivers All Operate Through Prompt Dose Without Extra Shielding
  • Perform Minimum Dose Rate Threshold Test on 100% of Units

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